|Title:||Fabrication and Characterization of the CZTS (Cu2ZnSnS4) Thin Film Absorption Layer Using Easy and Low Cost Sol-gel Dip-coating Technique|
|Keywords:||Thin film, Sol-gel, Buffer Layer, Solar Cells, CZTS (Cu2ZnSnS4), XRD, SEM, EDS|
Cu2ZnSnS4 (CZTS) thin films were developed through sol-gel dip-coating method. These films were annealed in vacuum at 550°C and further characterized by UV–vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS) procedures. The CZTS films exhibited tremendous optical absorption (2 × 104 cm-1) and demonstrated band gap energy of 1.58 eV. X-ray diffraction analysis revealed the formation of kesterite structure of CZTS films. Scanning electron micrograph displayed the formation of densely packed, compact and large grained CZTS films. The thin film indicated irregular dissemination of agglomerated particles with well-defined boundaries. The energy dispersive X-ray spectroscopy study gave the stoichiometric ratio as Cu: Zn: Sn: S=1.9:1.35:1:5.2.